PART |
Description |
Maker |
CY7C1372CV25-167AI CY7C1372CV25-167BGI CY7C1372CV2 |
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA119 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA119 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 12k × 36/1M × 18流水线的SRAM架构的总线延迟 CAP,Ceramic,10000pF,500VDC,10-% Tol,10% Tol,X7R-TC Code,-15,15%-TC,30ppm-TC RoHS Compliant: Yes 512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture
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Cypress Semiconductor, Corp. Cypress Semiconductor Corp.
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CY7C1366B-200BGI CY7C1366B-200BGC CY7C1366B-225BGI |
Low Cost, 300 MHz Rail-to-Rail Amplifier (Single); Package: SOT-23; No of Pins: 5; Temperature Range: Industrial 512K X 18 CACHE SRAM, 3.5 ns, PQFP100 CONNECTOR ACCESSORY 512K X 18 CACHE SRAM, 3 ns, PQFP100 9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 512K X 18 CACHE SRAM, 2.8 ns, PBGA119 9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 256K X 36 CACHE SRAM, 2.8 ns, PBGA165 9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 9 - MB的(256 × 36/512K × 18)流水线双氰胺同步静态存储器
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Cypress Semiconductor, Corp. Cypress Semiconductor Corp.
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WPS512K32-15PJC WPS512K32-15PJI WPS512K32-17PJC WP |
512K x 8 SRAM, 15ns 512K x 8 SRAM, 17ns 512K x 8 SRAM, 20ns 512K x 8 SRAM, 25ns
|
White Electronic Designs
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CY7C1382CV25-167AI CY7C1382CV25-200BZI CY7C1382CV2 |
512K x 36 pipelined SRAM, 167MHz 512K x 36/1M x 18 Pipelined SRAM 512K X 36 CACHE SRAM, 3 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3.4 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA119 512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3 ns, PBGA119 512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3 ns, PBGA165 TRANS DARL PNP 100V 8A TO-220FP 1M X 18 CACHE SRAM, 3.4 ns, PQFP100 512K x 36 pipelined SRAM, 225MHz
|
Cypress Semiconductor, Corp.
|
MX26C4000BTI-90 MX26C4000BQI-15 MX26C4000BQI-10 MX |
4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 512K X 8 FLASH 12V PROM, 120 ns, PDSO32 4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 512K X 8 FLASH 12V PROM, 120 ns, PQCC32 4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 512K X 8 FLASH 12V PROM, 90 ns, PQCC32 4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 512K X 8 FLASH 12V PROM, 90 ns, PDIP32 Switch Actuator; For Use With:18 Series Switches; Accessory Type:Spring Lever Actuator RoHS Compliant: Yes IC DRIVER 1/2BRDG LOW SIDE 16DIP DIODE SCHTTKY 150V 2X30A TO247AD
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Macronix International Co., Ltd.
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MCM63P837ZP200R MCM63P919ZP200R MCM63P837ZP200 MCM |
512K X 18 CACHE SRAM, 3 ns, PBGA119 512K X 18 CACHE SRAM, 2.6 ns, PBGA119 256K x 36 and 512K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM
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FREESCALE SEMICONDUCTOR INC Motorola, Inc
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IDT71V424L IDT71V424S10PH IDT71V424S10PHG IDT71V42 |
3.3V CMOS STATIC RAM 4 MEG (512K x 8-BIT) 512K X 8 STANDARD SRAM, 15 ns, PDSO44 TRANS NPN W/RES 60 HFE NS-B1 512K X 8 STANDARD SRAM, 10 ns, PDSO36 TRANS NPN W/RES 80 HFE NS-B1 3.3V 512K x 8 Static RAM Center Pwr & Gnd Pinout
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Integrated Device Technology, Inc. IDT[Integrated Device Technology]
|
TC55VL818FF-75 |
512K Word x 18 Bit Synchronous No-turnround Static RAM(512K 字x18位同步无转向静RAM)
|
Toshiba Corporation
|
CY14B104L-BA15XCT CY14B104L-BA15XI |
4 Mbit (512K x 8/256K x 16) nvSRAM 512K X 8 NON-VOLATILE SRAM, 15 ns, PBGA48
|
Cypress Semiconductor, Corp. CYPRESS SEMICONDUCTOR CORP
|
SST28SF040A-120-4I-EHE SST28SF040A-120-4C-EHE SST2 |
4 Mbit (512K x8) SuperFlash EEPROM 512K X 8 FLASH 2.7V PROM, 200 ns, PQCC32 512K X 8 FLASH 5V PROM, 90 ns, PDSO32 512K X 8 FLASH 5V PROM, 120 ns, PQCC32 512K X 8 FLASH 5V PROM, 120 ns, PDSO32
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Silicon Storage Technol... SILICON STORAGE TECHNOLOGY INC
|
TC55VD818FF-150 TC55VD818FF-133 TC55VD818FF-143 |
512K Word x 18 Bit Synchronous No-turnround Static RAM(512K 字x18位同步无转向静RAM) 12k字18位同步无具体时间的静态存储器(为512k字x18位同步无转向静态内存)
|
Toshiba Corporation Toshiba, Corp.
|
GS88436B-133 GS88436B-133I GS88436B-150 GS88436B-1 |
512K x 18, 256K x 36 8Mb S/DCD Sync Burst SRAMs 512K X 18 CACHE SRAM, 8.5 ns, PBGA119
|
Electronic Theatre Controls, Inc. GSI Technology
|
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